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| JMnic Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION With TO-3PML package High current capability Low collector saturation voltage APPLICATIONS For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Maximum absolute ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -100 -60 -6 -15 3.5 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SA1513 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA; IC=0 IC=-12 A;IB=-0.6 A -6 V Collector-emitter saturation voltage -0.5 V VBEsat Base-emitter saturation voltage IC=-12 A;IB=-0.6 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-6V; IC=0 -10 |I A hFE DC current gain IC=-3A ; VCE=-2V 100 400 COB fT Output capacitance IE=0 ; VCB=-10V;f=1MHz IC=-1.5A ; VCE=-10V 300 pF Transition frequency 80 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1513 Fig.2 Outline dimensions 3 |
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